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12-04-2012 Personal Press release
Distributing Smartphone App for "FlashAir™", the SDHC Memory Card with Embedded Wireless LAN Communications
07-24-2012 About Press release
Toshiba to Adjust Production of NAND Flash Memory at Yokkaichi
06-13-2012 About Press release
Toshiba Unveils First Demonstration System to Support Version 1.1 of Universal Flash Storage (UFS) Specification
02-23-2012 About Press release
Toshiba develops, manufactures 19nm generation NAND Flash Memory with world's largest density and smallest die size
02-06-2012 About Release
Toshiba's Enterprise SSDs Won Director-General's Prize, The Agency for Natural Resources and Energy of Grand Prize for Excellence in Energy Efficiency and Conservation
01-06-2012 Business Press release
Toshiba to launch SLC NAND flash memory embedded ECC
10-05-2011 About Press release
Two manufacturing companies of HDD and SSD in Philippines to be unified into one company
07-13-2011 About Press release
Hynix and Toshiba Sign Joint Development for MRAM
07-12-2011 About Press release
Toshiba and SanDisk Celebrate the Opening of Fab 5 300mm NAND Flash Memory Fabrication Facility in Japan
06-23-2011 About Press release
Toshiba reinforces storage device business by re-forming development and sales
04-21-2011 About Press release
Toshiba launches 19nm process NAND flash memory
04-06-2011 About Press release
Toshiba introduces new embedded-NAND flash memory in 24nm process
08-31-2010 About Press release
Toshiba launches 24nm process NAND flash memory
07-22-2010 About Press release
Samsung and Toshiba to Support New Standardized NAND Specification for High-performance Applications
07-14-2010 About Press release
Toshiba Starts Construction of Fab 5 for NAND Flash Memory at Yokkaichi
06-17-2010 Business Press release
Toshiba Launches Industry's Largest Embedded NAND Flash Memory Modules
02-03-2010 About Press release
Toshiba to strengthen memory back-end process development capabilities
01-07-2010 Business Press release
Toshiba to enhance line-up of 32nm multi-level cell SSDs.
01-07-2010 About Press release
Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology
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